Wafer-scale MoS₂ and TMDs with atomic precision. Enabling the future of semiconductor devices beyond Moore's Law.
High-quality 2D material wafers engineered for research and industrial applications
Our proprietary MOCVD process enables wafer-scale growth of 2D materials with unmatched uniformity and reproducibility. Precise control of precursor flow and temperature profiles ensures monolayer precision across the entire 2-inch wafer.
Less than 5% thickness variation across 2-inch diameter
Batch-to-batch consistency for industrial requirements
Compatible with standard semiconductor processing workflows
Comprehensive spectroscopic analysis verifying layer uniformity and quality
Raman spectroscopy confirms layer thickness through peak separation analysis. The difference between E₂g and A₁g modes indicates monolayer vs. multilayer regions.
Monolayer: ~19 cm⁻¹ | Multilayer: ~21-22 cm⁻¹ confirming layer count
Strong PL emission at ~1.9 eV confirms direct bandgap of monolayer MoS₂. The A and B exciton peaks verify material quality and layer count.
Direct bandgap of 1.9 eV confirmed for monolayer; indirect transition observed in multilayer
Enabling next-generation devices across multiple industries
Field-effect transistors (FETs), beyond-Moore devices, and flexible electronics
Photodetectors, LEDs, and valleytronic devices utilizing direct bandgap
High-sensitivity chemical and biosensors with atomic-scale detection
Quantum computing components and spintronic device research
THz devices and high-frequency components for next-gen networks
Academic and industrial research requiring consistent, high-quality 2D materials
Consistent monolayer coverage across entire 2-inch substrate
Batch-to-batch consistency validated by spectroscopic data
Every wafer shipped with Raman and PL characterization data
Custom layer counts, substrates, and TMD compositions available
Get in touch for samples, data sheets, or custom growth inquiries