Now offering 2-inch wafer-scale MoS₂

Next-Generation
2D Material Wafers

Wafer-scale MoS₂ and TMDs with atomic precision. Enabling the future of semiconductor devices beyond Moore's Law.

2-inch
Wafer Scale
99%
Uniformity
Monolayer
Precision
CVD
Growth

Product Portfolio

High-quality 2D material wafers engineered for research and industrial applications

MoS₂ on Silicon

2-inch wafer | SiO₂/Si substrate
  • Single-layer (monolayer) variants
  • Multilayer configurations (2-10L)
  • CMOS-compatible fabrication

MoS₂ on Sapphire

C-plane Al₂O₃ substrate
  • Superior crystalline quality
  • Optoelectronic grade
  • Single & multilayer available

Custom TMDs

Custom growth services
  • WS₂, WSe₂, MoSe₂
  • Heterostructure growth
  • Specialized substrates
Advanced Growth Technology

Metal-Organic Chemical Vapor Deposition

Our proprietary MOCVD process enables wafer-scale growth of 2D materials with unmatched uniformity and reproducibility. Precise control of precursor flow and temperature profiles ensures monolayer precision across the entire 2-inch wafer.

Wafer-Scale Uniformity

Less than 5% thickness variation across 2-inch diameter

High Reproducibility

Batch-to-batch consistency for industrial requirements

Fab-Ready Integration

Compatible with standard semiconductor processing workflows

CVD Growth System
850°C
Growth Temp
99.9%
Precursor Purity
2h
Growth Time

Material Characterization

Comprehensive spectroscopic analysis verifying layer uniformity and quality

Figure 1: Raman spectra showing E₂g and A₁g modes for monolayer and multilayer MoS₂

Raman Analysis

Raman spectroscopy confirms layer thickness through peak separation analysis. The difference between E₂g and A₁g modes indicates monolayer vs. multilayer regions.

E₂g Mode
385 cm⁻¹
In-plane vibration
A₁g Mode
408 cm⁻¹
Out-of-plane vibration
Peak Separation

Monolayer: ~19 cm⁻¹ | Multilayer: ~21-22 cm⁻¹ confirming layer count

Applications

Enabling next-generation devices across multiple industries

Electronics

Field-effect transistors (FETs), beyond-Moore devices, and flexible electronics

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Optoelectronics

Photodetectors, LEDs, and valleytronic devices utilizing direct bandgap

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Sensors

High-sensitivity chemical and biosensors with atomic-scale detection

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Quantum Materials

Quantum computing components and spintronic device research

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6G Communications

THz devices and high-frequency components for next-gen networks

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R&D Labs

Academic and industrial research requiring consistent, high-quality 2D materials

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Why Choose NanoLayer Tech

Wafer-Scale Uniformity

Consistent monolayer coverage across entire 2-inch substrate

High Reproducibility

Batch-to-batch consistency validated by spectroscopic data

Data-Backed Quality

Every wafer shipped with Raman and PL characterization data

Customization

Custom layer counts, substrates, and TMD compositions available

Request Information

Get in touch for samples, data sheets, or custom growth inquiries

We typically respond within 24 hours. All inquiries are confidential.